Devices:
Content

Junctions. Basic structure of pn junction. Builtin potential barrier.
Electric field and potential drop across the junction. Space charge width. pn junction under bias. Reverse bias. Space charge width and electric field. Junction capacitance. Onesided junctions. Forward bias. pn Junction charge flow: qualitative description. Carrier injection. Minority carrier distribution. Ideal pn junction current –wide diode. QuasiFermi levels in a pn junction diode. Charge control approximation. Pn junction current –“short” diode. Deviations from the ideal diode. Temperature effects. Generationrecombination current. Junction breakdown. Smallsignal model. Diffusion resistance. Diffusion capacitance. Diode transients. Schottky barrier diode.Ideal junction properties. Nonideal effects. Schottky barrier diode.IV relationship. Comparison of the Schottky barrier diode and pn junctiondiode. Metalsemiconductor Ohmic contacts.Ideal nonrectifying barriers. Tunneling barriers. Specific contact resistance. Heterojunctions. Energy band diagrams. Band offsets. Introduction to MOSFET and applications. CMOS technology. MOS capacitor structure. MOS capacitor band diagram for accumulation, depletion and inversion. MOS capacitor. Surface potential. Depletion layer thickness. Work function difference. MOS capacitor. Flatband voltage. Threshold voltage. Charge distribution. MOS capacitor. CV characteristics. Frequency effect.Fixed oxide charge and interface charge. MOSFET operation. Output and transfer characteristics. MOSFET operation. Transconductance. Body effect and substrate bias. SOI devices. Smallsignal model. Frequency limitation factors. Cutoff frequency. MOSFET nonideal effects: subthreshold conduction, channel length modulation, mobility modulation. MOSFET scaling. Short channel effects. Contact resistance, draininduced barrier lowering (DIBL), oxide tunneling. Shortchannel MOSFET devices (UTC SOI, FinFET). Bipolar Junction Transistor (BJT): structure and fundamentals of operation. BJT operation modes. Amplification using BJT. Performance characteristics. Detailed BJT operation. Terminal current equations. EbersMoll model. BJT as a switching element. Switching cycle. Nonideal effects: nonuniform doping effect, Early effect, punchthrough and breakdown, high and low emitter injection, emitter length effect, current crowding.GummelPoon model. BJT smallsignal operation. Hybridpi model. Cutoff frequency. 
Textbooks

Semiconductor Physics and Devices: Basic Principles, Donald A.Neamen
