Junctions. Basic structure of p-n junction. Built-in potential barrier.
Electric field and potential drop across the junction. Space charge width.
p-n junction under bias. Reverse bias. Space charge width and electric field. Junction capacitance. One-sided junctions.
Forward bias. p-n Junction charge flow: qualitative description. Carrier injection. Minority carrier distribution. Ideal p-n junction current –wide diode.
Quasi-Fermi levels in a p-n junction diode. Charge control approximation. P-n junction current –“short” diode.
Deviations from the ideal diode. Temperature effects. Generation-recombination current.
Small-signal model. Diffusion resistance. Diffusion capacitance. Diode transients.
Schottky barrier diode.Ideal junction properties. Non-ideal effects.
Schottky barrier diode.I-V relationship. Comparison of the Schottky barrier diode and p-n junctiondiode.
Metal-semiconductor Ohmic contacts.Ideal non-rectifying barriers. Tunneling barriers. Specific contact resistance.
Heterojunctions. Energy band diagrams. Band offsets.
Introduction to MOSFET and applications. CMOS technology. MOS capacitor structure. MOS capacitor band diagram for accumulation, depletion and inversion.
MOS capacitor. Surface potential. Depletion layer thickness. Work function difference.
MOS capacitor. Flat-band voltage. Threshold voltage. Charge distribution.
MOS capacitor. C-V characteristics. Frequency effect.Fixed oxide charge and interface charge.
MOSFET operation. Output and transfer characteristics.
MOSFET operation. Transconductance. Body effect and substrate bias. SOI devices. Small-signal model. Frequency limitation factors. Cutoff frequency.
MOSFET non-ideal effects: subthreshold conduction, channel length modulation, mobility modulation. MOSFET scaling.
Short channel effects. Contact resistance, drain-induced barrier lowering (DIBL), oxide tunneling. Short-channel MOSFET devices (UTC SOI, FinFET).
Bipolar Junction Transistor (BJT): structure and fundamentals of operation. BJT operation modes.
Amplification using BJT. Performance characteristics.
Detailed BJT operation. Terminal current equations. Ebers-Moll model.
BJT as a switching element. Switching cycle.
Non-ideal effects: non-uniform doping effect, Early effect, punch-through and breakdown, high and low emitter injection, emitter length effect, current crowding.Gummel-Poon model.
BJT small-signal operation. Hybrid-pi model. Cutoff frequency.
Semiconductor Physics and Devices: Basic Principles, Donald A.Neamen